Bayesian optimization (BO) is an efficient framework for optimization of black-box objectives when function evaluations are costly and gradient information is not easily accessible. BO has been successfully applied to automate the task of hyperparameter optimization (HPO) in machine learning (ML) models with the primary objective of optimizing predictive performance on held-out data. In recent years, however, with ever-growing model sizes, the energy cost associated with model training has become an important factor for ML applications. Here we evaluate Constrained Bayesian Optimization (CBO) with the primary objective of minimizing energy consumption and subject to the constraint that the generalization performance is above some threshold. We evaluate our approach on regression and classification tasks and demonstrate that CBO achieves lower energy consumption without compromising the predictive performance of ML models.

We propose a novel constrained Bayesian Optimization (BO) algorithm optimizing the design process of Laterally-Diffused Metal-Oxide-Semiconductor (LDMOS) transistors while realizing a target Breakdown Voltage (BV). We convert the constrained BO problem into a conventional BO problem using a Lagrange multiplier. Instead of directly optimizing the traditional Figure-of-Merit (FOM), we set the Lagrangian as the objective function of BO. This adaptive objective function with a changeable Lagrange multiplier can address constrained BO problems which have constraints that require costly evaluations, without the need for additional surrogate models to approximate constraints. Our algorithm enables a device designer to set the target BV in the design space, and obtain a device that satisfies the optimized FOM and the target BV constraint automatically. Utilizing this algorithm, we have also explored the physical limits of the FOM for our devices in 30 - 50 V range within the defined design space.